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ZXMN7A11K
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
V (BR)DSS
70
V
I D = 250 A, V GS =0V
voltage
Zero gate voltage drain current I DSS
1
A
V DS = 70V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage V GS(th)
1.0
V
I D = 250 A, V DS =V GS
Static drain-source on-state
resistance (*)
R DS(on)
0.13
0.19
V GS = 10V, I D = 4.4A
VGS= 4.5V, ID = 3.8A
Forward transconductance (*)(?) g fs
4.66
S
VDS= 15V, ID= 4.4A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
298
35
21
pF
pF
pF
V DS = 40V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
t d(on)
1.9
ns
Rise time
Turn-off delay time
Fall time
Total gate charge
t r
t d(off)
t f
Q g
2
11.5
5.8
4.35
ns
ns
ns
nC
V DD = 35V, I D = 1A
R G ? 6.0 , V GS = 10V
V DS = 35V, V GS = 5V
I D = 4.4A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
7.4
1.06
1.8
nC
nC
nC
V DS =35V, V GS = 10V
I D = 4.4A
Source-drain diode
Diode forward voltage (*)
V SD
0.85
0.95
V
T j =25°C, I S = 2.5A,
V GS =0V
Reverse recovery time (?)
t rr
19.8
ns
T j =25°C, I S = 2.5A,
Reverse recovery charge
(?)
Q rr
14
nC
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 2 - August 2006
? Zetex Semiconductors plc 2006
4
www.zetex.com
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